SOI Chip-based Photodetector Array
Chip-based multi-channel photodetector array is a product based on Ge-Si SOI platform. This product achieved the integration of multi-channel photodetectors on a single SOI chip. The MMI-based optical hybrider/mixer could also be integrated on the chip. It is capable of tiny polarization sensitivity and large electrical bandwidth. Both the die products and chip package solutions are provided.
Features
Multi-channels
Chip based
Large electrical bandwidth
Specification
参数指标 Parameters 单位 Unit 最小值 Min. 典型值 Typ. 最大值 Max. 备注 Notes 波长范围 Wavelength range nm 1530—1570 nm or 1270nm—1330 nm 暗电流 Dark current nA 35 50 3 dB模拟带宽 3 dB bandwidth GHz 28 光饱和功率 Optical saturation power mW 10 响应度 Responsibility A/W 0.8 0.85 90度光学混频器损耗 90°mixer loss dB 6 6.5 6.7 90度光学混频器相位失衡度 90°mixer phase unbalance ° 5 通道数 Number of channels 8或可定制 8 or Can be customized 光纤接入损耗 Insertion loss dB ≤0.5 偏振相关损耗 PDL dB ≤0.3 工作温度范围 Operating temperature range °C -20 50 工作湿度范围 Operating humidity range % +65 芯片尺寸 Chip Dimensions mm 4(L)×5(W)×0.5(H)
Chip dimension
Ordering information
ZG 波长 Wavelength 通道数 Number of channels 类型 Type 13=1310nm 15=1550nm 1=1CH 4=4CH 8=8CH 16=CH 48=48CH XX=other 1=光电探测器 1=PD 2=混频器 2=Mixer XX=other
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