Silicon-based Single-chip Integrated 9Bit VODL Chip
Introduction
Single-chip integrated multi-bit optical delay chip is based on thick film SOI silicon photonic technology, which is the optical time delay product with the best comprehensive performance and the highest integration. Adopting binary multi-stage delay loop structure, the chip integrates delay switch and delayed optical waveguide loop with equalization and clutter suppression attenuator, the delay switching time reaches less than 200ns, and the maximum total delay is 1022ps. The delay accuracy is 0.5ps, and the single-stage delay loss in the chip is as low as 0.8dB/bit. Compared with the traditional electric delay chip using microwave transmission line, the optical delay line can be applied to any microwave and millimeter-wave frequency band, with extremely low crosstalk and high extinction ratio of non-target delay signal. The maximum delay of 1ns 9bit variable optical delay chip size is as small as 2cm×1.5cm, which greatly reduces the system volume; Due to the optical carrier frequency relative to microwave signals up to 4 orders of magnitude larger than the frequency ratio, the photonic integrated of delay chip has a full range of signal processing capability covering all frequency bands from meter wave to millimeter wave, which is suitable for all types of ultra-wideband phased array beam synthesis applications.
Features
应用
主要性能指标
性能指标Parameter 单位Unit 典型值Typ. 备注Notes 工作波长Operationwavelength nm 1530-1570 延时位数Delay bits / 9 可定制Can be customized 最小延时步进Min.step-delay ps 2 可定制Can be customized 可调节最大延时量Adjustable max.delay ps 1022 延时精度Time-delay accuracy ps ±0.5 ≤16ps 延时量 delay time ±1 18~64ps 延时量delay time ±2 66~512ps 延时量delay time ±3 514~1022ps 延时量delay time 延时切换时间Delay switching time ns 200 插入损耗Insertion loss dB 11 13dB max 各延时态损耗差异Delay state loss difference dB ±1 最大耐受光功率Max. tolerance opticl power dBm 23 26dBm max 回波损耗Return loss dB 45 芯片尺寸Chip dimension mm 20×15×0.7
Chip dimension(Unit:mm)Schematic diagram