1030nm DFB Laser
A pulsed semiconductor laser with a peak wavelength of 1030 nanometers (nm) and employs a distributed feedback structure. 
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Detailed information

1030nm DFB Laser

Definition

The 1030nm DFB (Distributed Feedback) laser is a pulsed semiconductor laser with a peak wavelength of 1030 nanometers (nm) and employs a distributed feedback structure. Its operating principle is based on a distributed feedback mechanism, which allows for the precise control of grating parameters and pulse injection conditions to achieve high peak power and precisely controlled wavelength laser pulses.

 

Feature

High peak power

Narrow pulse width

Precise wavelength control

High PER

Fiber optic coupling design

7-pin BTF package with RF connector (optional)

 

Application

Optic communication

Device calibration

LiDAR

Spectral analysis

Fiber laser marking

 

Specification

 

Recommended operating conditions

Parameters

Min

Typ

Max

Unit

Note

Chip temperature

20

25

30

 

Peak drive voltage in pulse mode

 

 

42

V

 

Peak forward current in pulse mode

 

 

2

A

 

Output peak power in pulse mode

 

 

300

mW

 

Pulse width (FWHM) of drive signal @ pulse mode

 

170

400

ps

 

Pulse repetition rate @ pulse mode

 

10

 

MHz

 

Forward current @ DC mode

20

 

220

mA

 

Output power @ DC mode

5

 

50

mW

 

 

Pulse characteristic

Parameters

Min

Typ

Max

Unit

Note

Output peak power

250

300

 

mW

 

Pulse width of optical signal (FWHM)

 

50

70

ps

 

Peak wavelength (selected by the customer)

1015

 

1125

nm

Accessibility can be achieved within the wavelength tolerance range when the pulse power is greater than 250 milliwatts.

Peak wavelength tolerance

 

±1

 

nm

 

Bandwidth (at -10dB level)

 

0.2

 

nm

 

 

CW characteristic

Parameters

Min

Typ

Max

Unit

Note

Output power

 

50

 

mW

 

Forward voltage

 

1.7

 

V

 

Threshold current

 

40

 

mA

 

Peak wavelength

1015

 

1125

nm

 

Peak wavelength tolerance

 

±1

 

nm

 

Wavelength temperature tuning property

 

100

 

pm/℃

 

Wavelength current tuning property

 

2

 

pm/mA

 

Side mode suppression ratio (SMSR)

 

50

 

dB

 

Polarization extinction ratio (PER)

 

18

 

dB

 

Polarization degree

 

TE

 

 

 

 

Absolute maximum rating

Parameters

Min

Max

Unit

Output peak power @ pulse mode (< 1 nanosecond pulse width, < 10% duty cycle)

 

500

mW

Peak forward current in pulse mode (< 1 ns pulse width, < 10% duty cycle)

 

2000

mA

Forward current @ DC mode

 

250

mA

Output power in CW mode

 

150

mW

Reverse voltage

 

2

V

TEC current

 

3

A

TEC voltage

 

4

V

Chip operating temperature

5

40

Shell operating temperature

0

70

Storage temperature

-40

85

Pin soldering temperature (up to 10 seconds, maximum shell temperature 120°C)

 

300

 

Typical pulse performance(reference only)

 

Typical CW performance(reference only)

 

 

Thermistor specifications

Parameter

Specification

Unit

Type

NTC

 

Resistance @ 25℃

10±0.1

kOhm

Beta 25-85℃

3435±1%

K

 

Fiber specifications

Parameters

Value

Value

Unit

Fiber type

HI1060

PM980

 

Numerical aperture (typical value)

0.14

0.12

 

Cut-off wavelength

920±50

900±70

nm

Mode field (core) diameter

6.2±0.3@1060nm

6.6±0.3@1060nm

µm

Cladding diameter

125±1

125±1

µm

Coating (buffer) diameter

245±15

245±15

µm

Casing (optional)

900

900

µm

Connector

FC/APC

FC/APC

 

Key

narrow

narrow

 

 

Dimension

 

 

Ordering info

ZG

A

B

Output power

Peak wavelength

250=250mW

300=300mW

XX=others

1015=1015nm

1030=1030nm

1125=1125nm

XX=others

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