1330nm DFB Laser
The laser is a semiconductor laser employing a distributed feedback structure. It has a peak wavelength of 1330 nm and an output power of 300 mW.
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Detailed information

1330nm DFB Laser

Definition

The laser is a semiconductor laser employing a distributed feedback structure. It has a peak wavelength of 1330 nm and an output power of 300 mW. Its working principle is based on a distributed feedback mechanism, that is, integrating a Bragg grating within the active region of the laser. This grating reflects light of a specific wavelength to form a laser resonant cavity, thereby achieving single-mode laser output.

 

Feature

High output power

Precise wavelength control

High side-mode suppression ratio

Low threshold current

High polarization extinction ratio

Specific electrical characteristics

 

Application

Fiber optic communication

Lidar

Medical diagnostics

Spectroscopic analysis

Scientific research


Specification

Parameters

Min

Typ

Max

Unit

Note

Chip temperature

20

25

40

 

Forward current

 

1500

1800

mA

 

Output power

100

 

300

mW

 

Forward current @ 50mW

 

 

1800

mA

 

Forward voltage @ 50mW

 

1.7

3.5

V

 

Threshold current

 

80

130

mA

 

Monitoring photodiode current

 

500

 

µA

 

Monitoring photodiode responsivity

 

1.5

 

µA/mW

 

 

 

Peak wavelength (select as needed)

1270

 

1330

nm

When the power is 300mW, the accessibility can be achieved within the wavelength tolerance range.

Peak wavelength tolerance

 

 

±3

nm

 

Wavelength temperature tuning capability

 

100

 

pm/℃

Resolution 20pm

Wavelength current tuning property

 

0.6

 

pm/mA

 

Side mode suppression ratio (SMSR)

35

45

 

dB

 

Polarization extinction ratio (PER)

12

15

 

dB

 

Polarization degree

 

TE

 

 

 

 

Absolute maximum rating

Parameters

Min

Max

Unit

Forward current

 

2000

mA

Reverse voltage

 

2

V

TEC current

 

3

A

TEC voltage

 

4

V

Chip operating temperature

5

50

Shell operating temperature

0

70

The bias voltage of the monitoring photodiode

 

5

V

Pin soldering temperature (up to 10 seconds,

maximum shell temperature 120°C)

 

300

Storage temperature

-40

85

Fiber band radius

3

 

cm

 

Typical performance (reference only)

 

Thermistor specifications

Parameter

Specification

Unit

Type

NTC

 

Resistance @ 25℃

10±0.1

kOhm

Beta 25-85℃

3435±1%

K

 

Fiber specifications

Parameters

Value

Value

Unit

Fiber type

HI1060

PM1310

 

Numerical aperture (typical value)

0.14

0.12

 

Cut-off wavelength

920±50

1200±70

nm

Mode field (core) diameter

6.2±0.3@1060nm

9.3±0.3@1060nm

µm

Cladding diameter

125±1

125±1

µm

Coating (buffer) diameter

245±15

245±15

µm

Casing (optional)

900

900

µm

Connector

FC/APC

FC/APC

 

Key

narrow

narrow

 

 

Dimension

 


Ordering info

ZG

A

B

Output power

Peak wavelength

5=5mW

30=30mW

XX=others

1270=1270nm

1330=1330nm

XX=others

 

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