980nm DFB Laser
The laser is a semiconductor laser employing a distributed feedback structure. Its peak wavelength is 980nm. Its operating principle is based on a distributed feedback mechanism; by precisely controlling grating parameters and current injection conditions, high stability and precise wavelength control of the laser output can be achieved.
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Detailed information

980nm DFB Laser

Definition

The laser is a semiconductor laser employing a distributed feedback structure. Its peak wavelength is 980nm. Its operating principle is based on a distributed feedback mechanism; by precisely controlling grating parameters and current injection conditions, high stability and precise wavelength control of the laser output can be achieved.

 

Feature

High stability                      

Precise wavelength control                  

High side-mode suppression ratio                  

Low threshold current                    

High polarization extinction ratio                  

Optical fiber coupling design

Application

Optical communication

Optical sensing

Lidar

Spectral analysis

Medical and biological sciences

 

Specification

Parameters

Min

Typ

Max

Unit

Note

Chip temperature

20

25

40

 

Forward current

 

100

120

mA

 

Output power

5

 

30

mW

 

Forward current @ 30mW

 

 

120

mA

 

Forward voltage @ 30mW

 

1.35

2

V

 

Threshold current

 

20

40

mA

 

Monitoring photodiode current

 

25

 

µA

 

Monitoring photodiode responsivity

 

0.3

 

µA/mW

 

 

 

Peak wavelength

(select as needed)

968

 

986

nm

When the power exceeds 30mW, the accessibility can be achieved within the wavelength tolerance range.

Peak wavelength tolerance

 

 

±1

nm

 

Wavelength temperature tuning capability

 

90

 

pm/℃

 

Wavelength current tuning property

 

1.5

 

pm/mA

 

Side mode suppression ratio (SMSR)

40

55

 

dB

 

Polarization extinction ratio (PER)

15

18

 

dB

 

Polarization degree

 

TE

 

 

 

 

Absolute maximum rating

Parameters

Min

Max

Unit

Forward current

 

150

mA

Reverse voltage

 

2

V

TEC current

 

3

A

TEC voltage

 

4

V

Chip operating temperature

5

55

Shell operating temperature

0

70

The bias voltage of the monitoring photodiode

 

5

V

Pin soldering temperature (up to 10 seconds,

maximum shell temperature 120°C)

 

300

Storage temperature

-40

85

Fiber band radius

3

 

cm

 

Typical performance (reference only)

 

Thermistor specifications

Parameter

Specification

Unit

Type

NTC

 

Resistance @ 25℃

10±0.1

kOhm

Beta 25-85℃

3435±1%

K

 

Fiber specifications

Parameters

Value

Value

Unit

Fiber type

HI1060

PM980

 

Numerical aperture (typical value)

0.14

0.12

 

Cut-off wavelength

920±50

900±70

nm

Mode field (core) diameter

6.2±0.3@1060nm

6.6±0.3@1060nm

µm

Cladding diameter

125±1

125±1

µm

Coating (buffer) diameter

245±15

245±15

µm

Casing (optional)

900

900

µm

Connector

FC/APC

FC/APC

 

Key

narrow

narrow

 

 

Dimension

 

 

 

 

 

 

Ordering info

ZG

A

B

Output power

Peak wavelength

5=5mW

30=30mW

XX=others

968=968nm

980=980nm

986=986nm

XX=others

 

 

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