20GHz Direct-through phase modulator
A thin-film lithium niobate electro-optic modulator chip package
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Detailed information

20GHz Direct-through phase modulator

Definition

The 20GHz direct-through phase modulator is based on a thin-film lithium niobate electro-optic modulator chip package. It is a high-frequency optoelectronic device based on the electro-optic effect (such as thin-film lithium niobate material). It directly changes the phase of the light wave through an external control signal (usually voltage) to achieve phase modulation of the optical signal. Its operating bandwidth is ≥20GHz and half-wave voltage is ≤4V.


Feature

High-frequency broadband performance

Low driving voltage

High stability

High power processing capability

Integrated and miniaturized design


Application

High-speed optical communication

Microwave photonics

Optical fiber sensing

LiDAR

Spectral analysis

Specification

Parameter

Symbol

test condition

Value

Unit

Working bandwidth

S21

 

20/30

GHz

Return loss

S11

 

-10

dB

Working wavelength

λ

 

1310/1550

nm

Insertion loss

IL

1550 nm CW0 dBm

4.5/max 5

dB

Extinction ratio

ER

 

20

dB

RF half-wave voltage

1550 nm CWf=50 kHz

3.5/ max 4

V

Unless otherwise specified, the test temperatures are all 25℃.

 

Maximum absolute rated value

Parameter

Symbol

Value

Unit

Input optical power

Ps,o

23

dBm

Input RF power

Ps,rf

23

dBm

Operating temperature

TW

-40 ~ +80

Storage temperature

TS

-55 ~ +85

 

Dimension

 

 

Pin

Symbol

Note

RF connector

RFIN

SSMP connector

Input fiber

OPIN

FC/APCPMF

Output fiber

OPOUT

FC/APCSMF

DC feeder 1

PIN1

DC feeder 2

PIN2

DC feeder 3

PIN3

DC feeder 4

PIN4

 

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